Yang's Group | Materials Informatics Lab
Materials Informatics Lab
Yang’s group aims to utilize high-throughput first-principles calculations and machine learning technologies to accelerate material innovations,
and offer theoretical guidance and understanding of the mechanisms behind experimental phenomena.
The PEAK, Ma On Shan, 09/2023
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High-throughput first-principles calculations for functional materials.
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Synergizing DFT calculations and experiments to reveal underlying mechanisms in experimental phenomena and predict novel functional materials.
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Physics-informed machine learning for material discovery.
02/2024
01/2024
01/2024
01/2024
01/2024
Dr. Yang was appointed Associate Editor of the IEEE Transactions on Emerging Topics in Computational Intelligence (Impact Factor: 5.3).
Dr. Yang was elected Secretary of the IEEE Hong Kong Chapter on Electronic Devices and Solid-State Circuits (ED/SSC).
Our collaborative study was published in npj 2D Materials and Applications (DOI: 10.1038/s41699-024-00443-2).
Our research highlight was published in National Science Review (DOI: 10.1093/nsr/nwad316). Congratulations to Dr. Yang Tong.
We contributed a chapter to "Two‐Dimensional Transition‐Metal Dichalcogenides: Phase Engineering and Applications in Electronics and Optoelectronics" (Wiley, DOI:10.1002/9783527838752).
Latest Publications
Deciphering the ultra-high plasticity in metal monochalcogenides
Lok Wing Wong, Ke Yang, Wei Han, Xiaodong Zheng, Hok Yin Wong, Chi Shing Tsang, Chun-Sing Lee, Shu Ping Lau, Thuc Hue Ly*, Ming Yang*, Jiong Zhao*
Nature Materials, pp. 1-9, 2024.
Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction
Wei Han, Xiaodong Zheng, Ke Yang, Chi Shing Tsang, Fangyuan Zheng, Lok Wing Wong, Ka Hei Lai, Tiefeng Yang, Qi Wei, Mingjie Li, Weng Fu Io, Feng Guo, Yuan Cai, Ning Wang, Jianhua Hao, Shu Ping Lau, Chun-Sing Lee, Thuc Hue Ly*, Ming Yang*, Jiong Zhao*
Nature Nanotechnology, vol. 18, no. 1, pp. 55-63, 2023.
Selective nano-buckling improves the performance of graphene logic transistors
Tong Yang, Ming Yang*
National Science Review, vol. 11, no. 2, pp. nwad316, 2024.
Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors
Yulin Yang, Tong Yang, Tingting Song, Jun Zhou, Jianwei Chai, Lai Wong, Hongyi Zhang, Wenzhang Zhu, Shijie Wang* and Ming Yang*
Nano Research, vol. 15, no. 5, pp. 4646–4652, 2022.
Improving carrier mobility in two-dimensional semiconductors with rippled materials
Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang* and Jing Wu*
Nature Electronics, vol. 5, pp. 489–496, 2022